Work

Carrier concentration adjustment in graphene QHR devices for metrology applications

Year: 2025

Type: article

Abstract: We report on the reversible tuning of the carrier concentration n of molecular-doped epigraphene designed for application as a quantum Hall resistance standard. Fine tuning of the carrier concentration required for optimal realization of the Hall resistance quantization is achieved by annealing, to increase n, or by pulsed application of ions created by an electrostatic discharge above the surface of the graphene device to decrease n. We also report on a rapid reduction in n when a device is exposed to air. These observations are part of a growing body of information on the long-term stability of epigraphene primary resistance standards.

Source: Journal of Applied Physics

DOI: 10.1063/5.0282848

Authors: Sergiy Rozhko, Nick Fletcher, Stephen P. Giblin

Institution: National Physical Laboratory

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funder: Department for Business, Energy and Industrial Strategy, UK Government