Si intercalation beneath epitaxial graphene: screening Mott states at the SiC(0001) interface
Year: 2025
Type: article
Abstract: Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two-dimensional configuration. This work examines Si intercalation of epitaxial graphene on SiC(0001) using three preparation methods. Dangling bond states at the interface were found to undergo a Mott–Hubbard metal–insulator transition as a result of a significant on-site repulsion. Comparing this heterostructure consisting of graphene and a Mott insulator with a similar system without graphene, reveals the screening ability of graphene’s conduction electrons on the on-site repulsion. The system presented here can serve as a template for further research on Mott insulators with variable band gap.
Source: 2D Materials
Institution: Chemnitz University of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,895
Funder: Deutsche Forschungsgemeinschaft
OpenAlex ID: W4414797472