Work

Ultra-low-temperature formation of high-quality SiO2 via interface-driven self-organization of polysilazane induced by atmospheric pressure plasma jet irradiation

Year: 2025

Type: article

Abstract: We converted perhydropolysilazane into SiO2 at a temperature below 65 °C by irradiating it with a low-temperature plasma jet composed of argon and water vapor. We evaluated the electrical properties of the SiO2 thin films obtained by using this method through capacitance–voltage and current density–electric field measurements on MOS capacitors. The results showed that the SiO2 thin films exhibited performance comparable with thermal oxides formed at 1000 °C. Based on these findings and the results of Fourier transform infrared spectroscopy measurements, we identified the film formation mechanism as interface-driven self-organization, which explains why the PHPS-converted SiO2 films exhibit thermal-oxide-like quality.

Source: AIP Advances

DOI: 10.1063/5.0282245

Authors: Kohei Sakaike, Jiawen Yu, Seiichiro Higashi

Institutions: National Institute of Technology, Hiroshima College, Hiroshima University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funders: Takahashi Industrial and Economic Research Foundation, Japan Society for the Promotion of Science