Work

First Experimental Demonstration of Spiral Resistive Field Plate Termination With Strong Process Robustness for 700 V Silicon Super Junction MOSFET

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3617045

Authors: Ming Qiao, Zesheng Shi, Daoming Shen, Hongyan Ge, Jie Zhang, Yichen Li, Zhaoji Li, Bo Zhang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G9000206819

OpenAlex ID: W4414798901

FWCI:

Cites: 11

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