Enhancing thermal management of GaN transistors with direct oil jet impingement: Experimental insights for high-power electronics
Year: 2025
Type: article
Abstract: This study experimentally investigates the cooling performance of oil jet impingement on high-power GaN transistors, focusing on the effects of nozzle geometry (diameter: 0.5 mm, 1 mm; nozzle-transistor distance: 5 mm, 10 mm) and properties of two fluids (a NewOil-A and Siloil M40). At a flow rate of 80 mL/min, Siloil M40 achieved a heat transfer coefficient of 13 848 W/m²K, reducing junction temperatures to 120 °C under 38 W power dissipation (corresponding to a heat flux density of 135 W/cm²). In contrast, NewOil-A yielded a junction temperature of 90°C under identical power and heat flux conditions, demonstrating NewOil-A’s superior cooling performance. The optimized system enabled a 198% improvement in power handling compared to uncooled operation. Smaller nozzles (diameter: 0.5 mm) and reduced nozzle-transistor distance (5 mm) enhanced cooling efficiency. Additionally, a novel correlation linking Nusselt, Reynolds, and Prandtl numbers is proposed, offering practical design guidelines for GaN-based power electronics in applications like electric vehicles.
Authors: Anas El amraoui, Riadh Boubaker, Souad Harmand
Language: English
Subfield: Mechanical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,920
OpenAlex ID: W4414806002