Work

Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors (Adv. Mater. 39/2024)

Year: 2024

Type: article

Abstract: Edge-Passivated 2D Nanoribbon Transistors In article number 2313694, Sihan Chen, Rashid Bashir, Arend M. van der Zande, and co-workers report a facile edge passivation method for p-type monolayer WSe2 nanoribbon transistors. The edge-passivated nanoribbons demonstrate improved hole mobility and hole doping compared to their microribbon counterparts.

Source: Advanced Materials

DOI: 10.1002/adma.202470315

Authors: Sihan Chen, Yue Zhang, William P. King, Rashid Bashir, Arend M. van der Zande

Institution: University of Illinois Urbana-Champaign

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4414857003

FWCI: 0.096

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Cited by: 1

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