Work

Eliminating Defect States in Monolayer Tungsten Diselenide by Coupling with a c-Plane Sapphire Surface

Year: 2025

Type: article

Source: Physical Review Letters

DOI: 10.1103/lswx-rxss

Authors: Chen Huang, Jinhuan Wang, Yilin Chen, Zuo Feng, Yuexing Xia, Guangjie Yao, Mengze Zhao, Guodong Xue, Si Zhou, Xiaozhi Xu, Xinfeng Liu, Enge Wang, Ji Chen, Kaihui Liu, Hao Hong

Institutions: Peking University, South China Normal University, National Center for Nanoscience and Technology, University of Chinese Academy of Sciences, Collaborative Innovation Center of Quantum Matter, Chinese Academy of Sciences, Songshan Lake Materials Laboratory, Institute of Physics

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G3043962517, G3689821655, G4451133272, G5148229918, G5203347807, G6887765784

OpenAlex ID: W4414889276

FWCI: 1.036

Cites: 50

Cited by: 5

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