Work

Study on AlxGa1-xN Graded Composite Barrier GaN HEMT

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183919

Authors: Ruihao Zhang, Fayu Wan

Institution: Nanjing University of Information Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898294

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Cites: 22

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