Work

A Numerical Model of SiC MOSFET for Electro-Thermal Characteristics Based on TCAD

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183938

Authors: Yujie Zhang, Yongle Huang, Yifei Luo

Institution: Naval University of Engineering

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898300

FWCI: 2.358

Cites: 2

Cited by: 1

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