Work

Development and Electrical Characteristics Study of a 10kV/125A SiC MOSFET Module

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183985

Authors: Yaodong Zhang, Yong Chen, Xu Cheng, Xiaotian Zhang

Institutions: Xi'an Jiaotong University, Guangdong Power Grid Company (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

Funder: China Southern Power Grid

OpenAlex ID: W4414898308

FWCI: 2.358

Cites: 6

Cited by: 1

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