Work

Substrate Coupling Considerations for Monolithic Integration of High-Voltage Power Transistors with Low-Voltage Devices and Circuits in GaN-on-Si Technology

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184097

Authors: Rui Ray Yao, Miao Cui, Zhao Wang, Sang Lam, Stephen Taylor

Institutions: University of Liverpool, Xi’an Jiaotong-Liverpool University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898319

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