Work

Degradation Evaluation of Single-Event Effects Induced by Heavy-Ion Irradiation on E-mode p-GaN Gate HEMT Devices

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184035

Authors: Yujie Cheng, Zhangzhe Yan, Jianjun Zhou, Denggui Wang, Zhuangzhuang Hu, Hongfei Wu, Haifeng Cheng

Institution: Nanjing University of Aeronautics and Astronautics

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898330

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Cites: 12

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