Work

A Novel Approach to Estimate the Thermal Destruction Point of SiC MOSFETs under Short Circuit Conditions

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184101

Authors: Rony Thomas, Zhe Yu, Sebastian Fahlbusch

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898344

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Cites: 2

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