Work

A novel mechanical stress related failure mechanism of the state-of-the-art SiC double trench MOSFET under surge current stress

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183978

Authors: Shikang Xu, Xuan Li, Hanqing Zhao, Yi Wen, Wensong Peng, Zekun Zhou, Xu Li, Xiaochuan Deng, Bo Zhang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Southwest Jiaotong University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414898356

FWCI: 4.601

Cites: 17

Cited by: 2

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