Work

Comparative Investigation of Gate Oxide Degradation in 1.2 kV Planar, Double-Trench, and Asymmetric-Trench SiC MOSFETs

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184007

Authors: Dingkun Zhao, Xin Yang

Institution: Hunan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414898360

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Cites: 7

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