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Low Roughness and Shape Reforming 4H-SiC Trench Process optimized by CCP Etching with High Temperature Annealing and Sacrificial Oxidation

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183963

Authors: Qiongyang Zhuang, Xixi Luo, Yu Chen, Caixin Gu, Lei Song, Kaiju Liao, Qin Hu, Jiamin Tian, Yidan Chen, Gang Chen, Jinliang He

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898380

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Cites: 3

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