Work

Current Overshoot and Oscillation Suppression in SiC MOSFETs Through Variable Gate Capacitance During Turn-on Transient

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183704

Authors: Xuchong Cai, Yishun Yan, Yanchen Pan, Mingcheng Ma, Binbo Xu, Dianguo Xu

Institution: Harbin Institute of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4414898383

FWCI:

Cites: 17

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