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Investigation on SiO2 Gate Formed through Ultrahigh-Temperature NO Oxidation

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183852

Authors: YingFeng He, Given Shucheng Chang, Decai Liu, Tao Zhu, ZheYang Li, Rui Jin

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: State Grid Corporation of China

OpenAlex ID: W4414898389

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Cites: 16

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