Work

Monolithically Integrated Over-Temperature Protection Circuit Based on GaN HEMTs

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183932

Authors: Pingyu Cao, Kepeng Zhao, Yihao Xu, Harm Van Zalinge, Ping Zhang, Miao Cui, Fei Xue

Institutions: Xi’an Jiaotong-Liverpool University, University of Liverpool

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4414898443

FWCI:

Cites: 8

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