Work

Thermal Dissipation in GaN-on-Sapphire Power HEMTs: Synergy of Substrate Thinning and High-Conductivity Thermal Interface Materials

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184084

Authors: Chang Liu, Junsong Jiang, Kun Tan, Jie Lu, Suxia Guo, Cungang Hu, Zhaofu Zhang, Xi Tang, Wenping Cao

Institutions: Anhui University, Wuhan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414898444

FWCI: 2.515

Cites: 15

Cited by: 1

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