Work

Study on Influencing Factors and Mechanisms of Single-Event Gate Rupture in SiC STP-MOSFETs

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183864

Authors: Ying Yang, Zixuan Liu, Chen Wang, Xulong Wang

Institution: Xi'an University of Technology

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Research and Development

OpenAlex ID: W4414898446

FWCI: 2.358

Cites: 7

Cited by: 1

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