Work

On the First Demonstration and Analysis of the HTGB Induced Electrical Degradation of High Voltage SiC IGBT Devices

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184043

Authors: Tuanzhuang Wu, Jiaxing Wei, Junhou Cao, Hao Fu, Zhaoxiang Wei, Desheng Ding, Siyang Liu, Weifeng Sun, Xiaolei Yang, Song Bai

Institution: Southeast University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Fundamental Research Funds for the Central Universities

OpenAlex ID: W4414898457

FWCI: 2.358

Cites: 14

Cited by: 1

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