Work

Research on Threshold Voltage Instability of SiC MOSFETs at High Temperature

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184090

Authors: Xu Cheng, Yong Chen, Xingyu Pei, Jianbiao Li, Hongyuan Wu, Cong Chen

Institutions: Guangdong Power Grid Company (China), North China Electric Power University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: China Southern Power Grid

OpenAlex ID: W4414898489

FWCI:

Cites: 5

Cited by:

Related to: