Work

SiC Power Module with Staggered Terminals Layout Design to Reduce Parasitic Inductance

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183879

Authors: Jiahang Wang Guangzhou, Xi Jiang Guangzhou, Runze Ouyang, Song Yuan, Yuanzhi Zhao, Qingrong Hu, Ying Wang, Xiaowu Gong

Institutions: Xidian University, Guangzhou Institute of Technology, Xi’an University of Posts and Telecommunications

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4414898492

FWCI:

Cites: 7

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