Work

Investigation on Surge Current Failure in 1200V SiC MOSFETs with Varied Gate Biases in the Third Quadrant

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184040

Authors: Chengyuan Zhou, Hengyu Wang, Yang Zou, Kuang Sheng

Institution: Zhejiang University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Technology Project of State Grid

OpenAlex ID: W4414898495

FWCI: 2.32

Cites: 6

Cited by: 1

Related to: