Work

Investigation and Improvement on Surge Robustness of Double-Trench SiC MOSFETs in Synchronous Rectification Mode

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184032

Authors: Hexin Zhu, Xiaochuan Deng, Haohao Dai, Qian Huang, Xuan Li, Xu Li

Institutions: University of Electronic Science and Technology of China, Southwest Jiaotong University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province

OpenAlex ID: W4414898537

FWCI:

Cites: 8

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