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Optimal Design of High-temperature SiC Power Module Based on Gene Algorithm

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Year: 2025
Type: conference-paper
Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
DOI: 10.1109/wipda-asia63772.2025.11184077
Authors: Zhenchun Xia, Jianing Wang, Shaolin Yu, Weina Mao, Xiahao Wang, Honghong Li, Runze Wang
Institutions: Hefei University of Technology, Institute of Energy, Hefei Comprehensive National Science Center, Anhui University of Science and Technology
Language: English

Topic: Silicon Carbide Semiconductor Technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

Funder: Research and Development
OpenAlex ID: W4414898568
FWCI:
Cites: 14
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