Work

Super-Junction IGBT with Adaptive Hole Channel around Stepped Trench Gate for Low On-State Voltage and Low Turn-Off Loss

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183946

Authors: Xuelei Zhou, Hengyu Wang, Yifan Wang, Kuang Sheng

Institutions: Zhejiang University, State Grid Zhejiang Electric Power Company (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4414898582

FWCI: 2.358

Cites: 9

Cited by: 1

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