Work

CNN-Based Rapid Co-Optimization of BV and RON,sp for 4H-SiC SJ MOSFET

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183861

Authors: Tiefu Wang, Haoyuan Cheng, Chi Zhang, Hengyu Wang, Kuang Sheng

Institution: Zhejiang University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

Funder: National Key Research and Development Program of China

OpenAlex ID: W4414898595

FWCI:

Cites: 16

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