Work

1200V SiC MOSFETs Under Dynamic Reverse Bias Testing in High-Temperature and High-Frequency Environments

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184018

Authors: Liudan Kong, Jiuyang Tang, Jiaying Cao, Yifei Chang, Hao Guan, Yuhan Duan, Qingchun Zhang, Pan Liu

Institution: Fudan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898604

FWCI: 2.358

Cites: 8

Cited by: 1

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