Work

Dry Oxidation and SiO₂ Deposition Strategies for High-Performance Gate Dielectrics in 3.3 kV SiC Power MOSFETs

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183994

Authors: Zijian Hu, Hongyi Xu, Na Ren, Kuang Sheng

Institution: Zhejiang University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414898626

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Cites: 20

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