Work

A 3L-ANPC SiC MOSFET Power Module with Low Thermal Coupling and Parasitic Inductance

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183961

Authors: Zedong Xue, Zhiyuan Qi, Zihao Chen, Hao Yuan, Qingwen Song, Yuming Zhang

Institution: Xidian University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4414898638

FWCI:

Cites: 15

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