Work

Development of a High-Power-Density SiC Module

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183700

Authors: Jiajun Yang, Xiaoshuang Hui, Puqi Ning

Institutions: Chinese Academy of Sciences, Institute of Electrical Engineering, University of Chinese Academy of Sciences

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4414898639

FWCI:

Cites: 6

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