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A Two-Stage Turn-On Gate Driver for SiC MOSFET with Short-Circuit Current Suppression

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183868

Authors: Yong Chen, Xiaolu Zhang, Xu Cheng, Yuze Zheng, Xuhui Song, Yukun Niu, Kaixiang Gong, Fan Zhang

Institutions: Guangdong Power Grid Company (China), Xi'an Jiaotong University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: China Southern Power Grid

OpenAlex ID: W4414898666

FWCI:

Cites: 4

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