Work

Simulation study of breakdown characteristic of vertical diamond Schottky barrier diodes with different drift layer parameters and termination structures

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183884

Authors: Tianhe Mi, Peng Wang, Yan Liu, Teng Jiao, Xinchun Cui, Haolin Hu, Yuxi Wan, Daohua Zhang

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898672

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Cites: 14

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