Work

Understanding the Role of Buffer Traps in GaN HEMTs: A Simulation Study on Dynamic Ron

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184046

Authors: Haiyang Li, Mengqi Fan, Xinyue Dai, Xiaoping Wang, David Zhou, Danfeng Mao, Yan Wang, Yuxi Wan

Institution: Tsinghua University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898689

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