Work

A self-clamped L-shaped trench gate SiC MOSFET with Improved Breakdown and Short-Circuit Reliability

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183905

Authors: Xiaobo Cao, Jing Liu, Shaowei Zhang, Qian Zhang, Zhonggang Yin

Institution: Xi'an University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4414898717

FWCI:

Cites: 17

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