Work

Impact of Kelvin Source Connection (KSC) vs. Common Source Connection (CSC) on Power Cycling Aging Characteristics of Silicon Carbide (SiC) MOSFETs

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184027

Authors: Huaihao Cheng, Yong Chen, Xu Cheng, Xingyu Pei, Jianbiao Li, Hongyuan Wu

Institution: Guangdong Power Grid Company (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

Funder: China Southern Power Grid

OpenAlex ID: W4414898725

FWCI:

Cites: 13

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