Work

The Establishment of Quasi-3D TCAD Simulation for Bipolar Degradation Occurs in SiC MOSFET Body Diode

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184070

Authors: Junhou Cao, Xinyu Zhou, Chenlu Wang, Lei Huang, Hao Fu, Zhaoxiang Wei, Tuanzhuang Wu, Jiaxing Wei, Siyang Liu, Weifeng Sun

Institution: Southeast University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Fundamental Research Funds for the Central Universities

OpenAlex ID: W4414898733

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