Work

Effect of Atomic-Level Roughness on Vertical β-Ga2O3 Schottky Barrier Diode and High-Temperature Performance

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183874

Authors: Jiaxiang Chen, Xingye Zhang, Maojin Yang, Xinpeng Lin, Teng Jiao, Yan Liu, Xianhu Zha, Haolin Hu, Xiangjin Ding, Yuxi Wan, Jun Ma, Mengyuan Hua, Dao-Hua Zhang

Institution: Southern University of Science and Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898741

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Cites: 15

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