Work

Design and Demonstration of a Novel SiC Trench MOSFET with Periodically Grounded P Shield Island Based on Secondary Epitaxy Process

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184093

Authors: Yangyang Wu, Fei Guo, Kuan Wang, Wei Chen, Zhijie Cheng, Yuan Jun, Rong Zhang, Guoqing Xin, Zhiqiang Wang

Institutions: Hubei Jiufengshan Laboratory, Huazhong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4414898746

FWCI:

Cites: 10

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