Work

Bias Temperature Instability of SiC Trench MOSFET under DC and AC gate stress

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183909

Authors: Kanghua Yu, Qian Wang, Yuwei Wang, Jun Wang

Institution: Hunan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898757

FWCI: 2.3

Cites: 18

Cited by: 1

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