Work

Enhancement-Mode Vertical (001) β-Ga2O3 Power Transistor Enabled by Dual Ion Implantation

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184029

Authors: Anjing Luo, Gaofu Guo, Li Zhang, Tiwei Chen, Dengrui Zhao, Zhili Zou, Chunhong Zeng, Huanyu Zhang, Baoshun Zhang, Zhucheng Li, Xiaodong Zhang, Zhongming Zeng

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: Chinese Academy of Sciences

OpenAlex ID: W4414898759

FWCI:

Cites: 22

Cited by:

Related to: