Work

Performance improvement of SiC n-LTT by semi-through via structure

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183877

Authors: Yulei Zhang, Xi Wang, Xuhui Pu, Jichao Hu, Hongbin Pu, Yuan Yang

Institution: Xi'an University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414898767

FWCI:

Cites: 12

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