Work

A Multi-Operation Characterization System for Quantifying Dynamic RON Degradation in p-GaN gate GaN HEMTs under Real-World Switching Conditions

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184092

Authors: Junbo Wang, Xiangdong Li, Xi Jiang, Haonan Jiang, Shuzhen You, Yue Hao, Jincheng Zhang

Institutions: Xidian University, Guangzhou Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Research and Development

OpenAlex ID: W4414898772

FWCI: 2.591

Cites: 17

Cited by: 1

Related to: