Work

Degradation of Planar-Gate SiC MOSFETs Under Repetitive Short-Circuit Stress in Different Gate Bias

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184019

Authors: Yifan Wu, Chi Li, Jianwei Liu, Zedong Zheng

Institution: Tsinghua University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414898773

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Cites: 9

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