Work

Design of an Active Gate Driver IC for E-Mode GaN HEMTs Based on Adaptive Phased Regulation

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183996

Authors: Wei Liu, Yuan Yang, Wenbin Xing

Institution: Xi'an University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414898778

FWCI:

Cites: 9

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