Work

The Method to Evaluate the SOA of Drain-Source Voltage for SiC MOSFET

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184060

Authors: Fengming Yang, Xin Li, Yifei Luo, Lin Liang, Yongle Huang

Institutions: Huazhong University of Science and Technology, Naval University of Engineering

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414908870

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Cites: 15

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