Work

Design and fabrication of a SiC trench MOSFET with multi-step p-type shielding and multiple CSL layers

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184042

Authors: Wei Chen, Fei Guo, Yangyang Wu, Kuan Wang, Zhijie Cheng, Jun Yuan, Rong Zhang, Guoqing Xin, Zhiqiang Wang

Institutions: Hubei Jiufengshan Laboratory, Huazhong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4414908877

FWCI:

Cites: 13

Cited by:

Related to: