Work

Analysis and compensation method of transient unbalanced current in parallel connection of SiC MOSFET

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183856

Authors: Yong Chen, Xu Cheng, Xingyu Pei, Jianbiao Li, Hongyuan Wu, Bin Zhao

Institutions: Guangdong Power Grid Company (China), North China Electric Power University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: China Southern Power Grid

OpenAlex ID: W4414908901

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Cites: 8

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